Fast growth at low temperature in vacancy-mediated phase separation
نویسندگان
چکیده
منابع مشابه
Room Temperature, Intrinsic Vacancy Mediated Ferromagnetism in Cr:Ga2Se3/Si
E. N. Yitamben, ∗ T. C. Lovejoy, A. B. Pakhomov, S. M. Heald, F. S. Ohuchi, and M. A. Olmstead Department of Physics, and Center for Nanotechnology (CNT), University of Washington, Box 351560, Seattle, Washington 98195, USA Department of Materials Science and Engineering, and Center for Nanotechnology (CNT), University of Washington, Box 352120, Seattle, Washington 98195, USA Advanced Photon So...
متن کاملVacancy formation and strain in low-temperature Cu/Cu(100) growth.
The development of compressive strain in metal thin films grown at low temperature has recently been revealed via x-ray diffraction and explained by the assumption that a large number of vacancies were incorporated into the growing films. The results of our molecular dynamics and parallel temperature-accelerated dynamics simulations suggest that the experimentally observed strain arises from an...
متن کاملLow-Temperature Mobile Phase for Peptide Trapping at Elevated Separation Temperature Prior to Nano RP-HPLC-MS/MS
Nano HPLC-MS/MS separation and detection of peptides for proteomic analysis is usually performed upon tryptic digest of proteins and peptide pre-concentration on trap columns. Pre-concentration on trap columns is needed for sample wash (removal of salts and impurities), sample focusing prior to separation, and volume reduction. Usually, trap columns are mounted on selection valves close to the ...
متن کاملAu-mediated low-temperature solid phase epitaxial growth of a SixGe1-x alloy on Si(001)
The evolution of microstructure during Au-mediated solid phase epitaxial growth of a SixGe12x alloy film on Si~001! was investigated by in situ sheet resistance measurements, x-ray diffraction, conventional and high-resolution transmission electron microscopy, energy dispersive x-ray spectroscopy, and Rutherford backscattering spectrometry. Annealing amorphous-Ge/Au bilayers on Si~001! to tempe...
متن کاملDisclination mediated dynamic recrystallization in metals at low temperature
Recrystallization is one of the most important physical phenomena in condensed matter that has been utilized for materials processing for thousands of years in human history. It is generally believed that recrystallization is thermally activated and a minimum temperature must be achieved for the necessary atomic mechanisms to occur. Here, using atomistic simulations, we report a new mechanism o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2001
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.63.060102